Beginning with the vapor-phase growth of GaN by H. P. Marcus and J. J. Tietjen in 1969, the research on nitride semiconductors has progressed with a focus on GaN. Nitride LEDs and LDs. These have been widely used as solid state lighting for energy saving and in high-density recording, such as Blu-ray, since blue LEDs became commercially available in 1996.

Nitride transistors with high-frequency and high-power will come into existence in the near future. Recent studies on nitride solar cells have made progress on full-spectrum solar cells which could respond to a full range of sunlight.

Thus, the device application of nitride semiconductors has progressed in a variety of fields; however, the crystalline quality is still poor in comparison with conventional III-V semiconductors such as GaAs and InP. For the future development of high efficiency devices with a long lifespan and the expansion of its applications, it is imperative to improve the crystalline quality and to control the crystal characteristics.

The purpose of this workshop is to analyze the status quo and determine a future direction for solving problems in the field of crystal growth of nitride semiconductors. To achieve this, the number of participants is limited to 50, including researchers from abroad. Frank and open discussions will be greatly encouraged among the selected professionals.

Participants are expected to have a common understanding of current technologies and the ability to solve problems in the area of crystal growth. Selected topics will be presented at the beginning of each session of the workshop, with participants presenting data, followed by deep and intensive discussion.

The Institute of Materials 雷速体育_中国足彩网￥在线直播 welcomes prospective participants to join the program in the City of Sendai at the heart of North-eastern Japan.

Chairs: Takashi Matsuoka and Hiroyuki Fukuyama

Program

November 18: Registration and welcome reception
November 19: Workshop and banquet
November 20: Workshop

日時：2018年11月18日（日）- 20日（火）

会場：東北大学金属材料研究所講堂（金研２号館１階）

• 詳細（金属材料研究所ウェブサイト）

問い合わせ先

電子材料物性学研究部門　谷川智之
TEL:022-215-2621 FAX:022-215-2302
E-mail: tanikawa*imr.tohoku.ac.jp（*を@に置き換えてください）