2021Äê | ÊÜÙp
Ä©¹âÕÜÒ²½ÌÊÚ£¨¹úëH¼¯·e¥¨¥ì¥¯¥È¥í¥Ë¥¯¥¹Ñо¿é_°k¥»¥ó¥¿©`£©¤ËIEEE¥Õ¥§¥í©`¤Î³ÆºÅ¤¬ÊÚÓ뤵¤ì¤Þ¤·¤¿
Ä©¹âÕÜÒ²½ÌÊÚ£¨¹úëH¼¯·e¥¨¥ì¥¯¥È¥í¥Ë¥¯¥¹Ñо¿é_°k¥»¥ó¥¿©`£©¤ÏIEEE£¨The Institute of Electrical and Electronics Engineers£©¤è¤ê¥Õ¥§¥í©`£¨Fellow£©¤Î³ÆºÅ ¤òÊÚÓ뤵¤ì¤Þ¤·¤¿¡£
For contributions to high-frequency high-electron-mobility transistors
¡¸¸ßëŠ×ÓÒƄӶȥȥé¥ó¥¸¥¹¥¿¤Ëév¤¹¤ëØ•Ïס¹
évßBÓ›ÊÂ
†–¤¤ºÏ¤ï¤»ÏÈ
–|±±´óѧ ¹úëH¼¯·e¥¨¥ì¥¯¥È¥í¥Ë¥¯¥¹Ñо¿é_°k¥»¥ó¥¿©`
Ö§Ô®ÊÒéL¡¡ ¸ß˜ò ¼Îµä
TEL£º022-796-3410
E-mail£ºsupport-office*cies.tohoku.ac.jp¡¡£¨*¤ò@¤ËÖä“Q¤¨¤Æ¤¯¤À¤µ¤¤£©