Tohoku University's Center for Innovative Integrated Electronic Systems (CIES), led by Professor Tetsuo Endoh (Graduate School of Engineering at Tohoku University) has announced success on a collaboration between CIES and semiconductor test equipment supplier Advantest Corporation.
The joint research team has developed a high-speed, high-precision module that can measure the switching currents in the memory arrays of spin-transfer torque magnetic random access memory (STT-MRAM), a highly-anticipated next-generation memory technology, in units of microamperes and nanoseconds, using an Advantest memory test system.
Memory test system and test environment. ? Advantest Corporation
This makes it possible to observe minute changes in the currents that flow through STT-MRAM memory cells, and represents a great stride toward STT-MRAM failure analysis and the practical application of STT-MRAM technology. This testing technology is available for not only STT-MRAM but also other resistance change type memory such as ReRAM and PCRAM.
Tohoku University CIES will continue research and development activities with the aim of commercializing a new STT-MRAM memory test system equipped with an external magnetic field application mechanism.
The research is sponsored by the CIES Consortium, and the Program on Open Innovation Platform with Enterprises, 雷速体育_中国足彩网￥在线直播 Institute and Academia (OPERA*). Results were presented at the IEEE Non-volatile Memory Technology Symposium held in Sendai from 22 to 24 October, 2018.
- *OPERA is a program aimed at the formation of a platform for industrial-academic collaborations. Members include Tohoku University, Kyoto University, Yamagata University, and a group of advanced companies. Tohoku University acts as the coordinator of the program.
雷速体育_中国足彩网￥在线直播:
Yasunobu MizomotoDirector, Strategic Planning DivisionTohoku UniversityCenter for Innovative Integrated Electronic SystemsEmail: y-mizomo
cies.tohoku.ac.jp